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w3013 indirect quadrature modulator with gain control preliminary data sheet november 1998 features n low-voltage operation: 2.7 v n high-frequency operation: 2.2 ghz n high rf output power: ?10 dbm n high-accuracy phase shifter, no trim required n low carrier feedthrough: ?45 dbc n automatic power control (apc) capability n low-current sleep mode n 20-pin tssop package applications n north american is-136 n japan pdc (rcr std 27) n japan phs (rcr std 28) n gsm 900, 1800, and 1900 mhz n narrowband cdma n digital satellite communications description the w3013 is a monolithic integrated circuit that provides indirect, quadrature modulation of an rf carrier by i & q baseband inputs. the function performed by the w3013 is particularly suited for handheld digital cellular and digital cordless telephones that operate between 800 mhz and 2.2 ghz. the circuit block diagram is shown below. from a single local-oscillator input (lo1), the phase shifter produces two lo signals with 90 phase separation and equal amplitude. the lo signals are fed to the in-phase (i) and quadrature (q) double-balanced mixers. the resulting signals are summed and fed into an rf mixer where the frequency can be translated to over 2 ghz. outputs between the summer and rf mixer are available for external filtering. finally, the signal is amplified to provide a single-ended output. the enb/apc input with a logic low allows the device to be put into a powerdown mode. above the logic low threshold, the device enters a power control mode that provides a range of desired output power levels. ? q q i i lo1 lo1ref ? lo2 lo2 ref rf out power control external filter rf out ? p/ 4 + p/ 4 internal low-pass filter enab/apc figure 1 . circuit block diagram
w3013 indirect quadrature modulator preliminary data sheet with gain control november 1998 2 lucent technol ogies inc. pin information top view 20 19 18 17 16 15 14 12 13 11 1 2 3 4 5 6 7 8 9 10 v cc filta i q q filtb i lo1ref lo1 gnd v cc rf out gnd enb/apc gnd gnd gnd lo2ref lo2 gnd 12-2680 figure 2 . pin diagram table 1 . pin descriptions pin symbol name/description 1 v cc positive supply voltage. for low-power/small-signal subcircuits. 2, 3 filta, filtb filter. nodes a & b for parallel resonant lc. 4 i differential baseband input. 5 i differential baseband input (inverting). 6 q differential baseband input. 7 q differential baseband input (inverting). 8, 9 lo1ref, lo1 first local oscillator input. either pin may be directly grounded. 10, 11, 14, 15, 17, 18 gnd power supply ground. 12, 13 lo2, lo2ref second local oscillator input. either pin may be directly grounded. 16 enb/apc enable/automatic power control. 19 rf out rf output. 20 v cc positive supply voltage. for rf output stage.
preliminary data sheet w3013 indirect quadrature modulator november 1998 with gain control lucent technologies inc. 3 absolute maximum ratings stresses in excess of the absolute maximum ratings can cause permanent damage to the device. these are absolute stress ratings only. functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. exposure to absolute maximum ratings for extended periods can adversely affect device reliability. parameter symbol min max unit ambient operating temperature t a ?40 100 c storage temperature t stg ?65 150 c lead temperature (soldering, 10 s) t l ? 300 c positive supply voltage v cc ? 5 vdc power dissipation p d ? 750 mw output current (continuous) i out ? 160 ma ac input voltage ? gnd v cc vp-p enable input voltage v enb gnd v cc vdc handling precautions although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (esd) during handling and mounting. lucent technologies microelectronics group employs a human-body model (hbm) and a charged-device model (cdm) for esd-susceptibility testing and protection design evaluation. esd voltage thresholds are dependent on the circuit parameters used to define the model. no industry-wide standard has been adopted for cdm. however, a standard hbm (resistance = 1500 w , capacitance = 100 pf) is widely used and, therefore, can be used for comparison purposes. the hbm esd threshold presented here was obtained by using these circuit parameters: esd threshold voltage device rating model w3013 3 1000 v hbm w3013 3 1000 v cdm
w3013 indirect quadrature modulator preliminary data sheet with gain control november 1998 4 lucent technol ogies inc. operating ranges this table lists the ranges of external conditions in which the w3013 provides general functionality that may be useful in specific applications without risk of permanent damage. however, performance is not guaranteed over the full range of all possible conditions. the conditions for guaranteed performance are described in the electrical characteristics table. parameter min typ max unit v cc 2.7 ? 3.6 v f lo1 100 178 350 mhz v lo1 100 250 600 mvp-p f lo2 100 1620 2200 mhz v lo2 100 250 600 mvp-p f rf <800 ? >2200 mhz i & q input range of dc bias for 1 vp-p differential input v cc /2 ? 0.1 v cc /2 v cc /2 + 0.1 vdc i & q input range of dc bias for 1 vp-p single-ended input v cc /2 ? 0.1 v cc /2 v cc /2 + 0.1 vdc i (q) to i ( q ) differential input swing* ? 1.0 1.1 vp-p ambient operating temperature ?35 25 85 c * distortion-dependent, e.g., 1.3 vp-p p /4 dqpsk peak voltage meets pdc or is-136 distortion specification under random data modulation. electrical characteristics table 2 . electrical characteristics conditions (unless otherwise specified): t a = 25 c 3 c, v cc = 2.7 vdc, r l = 50 w , f lo1 = 178 mhz, f lo2 = 1620 mhz, p lo1 = p lo2 = ?10 dbm, v bias (i) = v bias ( i ) = v bias (q) = v bias ( q ) = v cc /2; i ? i = 0.5 ? cos(2 p t ? 80 khz ? p /2) v, q ? q = 0.5 ? cos(2 p t ? 80 khz) v, f rfout = 1442.08 mhz, v apc = 2.7 vdc. parameter min typ max unit v cc supply current: active mode ? 37 ? ma sleep mode @ v cc = 3.3 v, enb/apc 0.1 vdc ? <1 50 a i & q: i & q signal path: 3 db bandwidth (differential input) ? 21 ? mhz i & q input bias current ? 500 1500 na i & q input impedance ? 1 ? m w lo1: lo1 suppression (relative to output power) ? 45 ? dbc lc filter pins: differential impedance ? 600 || 1.2 ? w || pf lo2: lo2 suppression (relative to output power) ? 35 ? dbc modulation accuracy: carrier suppression (relative to wanted sideband) 35 50 ? dbc lower sideband suppression 35 45 ? dbc transmitted i and q amplitude error ? 0.1 ? db transmitted i and q phase error ? 1 ? degrees error vector magnitude (see page 6 .) ? 1.3 5 %
preliminary data sheet w3013 indirect quadrature modulator november 1998 with gain control lucent technologies inc. 5 electrical characteristics (continued) table 2. electrical characteristics (continued) conditions (unless otherwise specified): t a = 25 c 3 c, v cc = 2.7 vdc, r l = 50 w , f lo1 = 178 mhz, f lo2 = 1620 mhz, p lo1 = p lo2 = ?10 dbm, v bias (i) = v bias ( i ) = v bias (q) = v bias ( q ) = v cc /2, i ? i = 0.5 ? cos(2 p t ? 80 khz ? p /2) v, q ? q = 0.5 ? cos(2 p t ? 80 khz) v, f rfout = 1442.08 mhz, v apc = 2.7 vdc. parameter min typ max unit rf output: output power (narrowband match): 1442 mhz ?13 ?8 ?3 dbm 800 mhz (lo2 = 978 mhz) ? ?8 ? dbm 1910 mhz (lo2 = 1732 mhz) ? ?10 ? dbm output power total range of apc control ? 55 ? db usable apc range:* pdc (iq offset < ?23 dbc, 100 khz adjacent channel power < ?60 dbc) 35 45 ? dbc is-136 (iq offset < ?23 dbc, 60 khz adjacent channel power < ?45 dbc) 45 54 ? dbc adjacent channel suppression at maximum output (1.3 vp-p random data digital modulation): 0.35-dqpsk modulation per is-136: 30 khz ? ?39 ?35 dbc 60 khz ? ?64 ?57 dbc 90 khz ? ?67 ?57 dbc 0.5-dqpsk modulation per japan pdc at maximum output: 50 khz ? ?60 ?54 dbc 100 khz ? ?73 ?65 dbc 0.5-dqpsk modulation per japan phs at maximum output: 600 khz ? ?62 ?50 dbc 900 khz ? ?63 ?50 dbc enable/apc: v ihmin (higher voltage turns device on) ? 0.81 1.0 v v ilmax (lower voltage turns device off) 0.6 ? ? v i ilmax (v enable/ apc = 0.4 v) ? ? <1 a i ihmax (v enable/ apc = 2.7 v) ? ? 40 a powerup/powerdown time ? ? 4 s apc voltage for minimum output power ? 1.0 ? vdc apc voltage for maximum output power 2.5 ? ? vdc apc bandwidth 5 ? ? mhz * usable apc range is defined to be the satisfaction of respective transmitter system requirements in the adjacent and alternate channels, as well as iq offset and evm requirements in each standard.
w3013 indirect quadrature modulator preliminary data sheet with gain control november 1998 6 lucent technol ogies inc. error vector magnitude (evm) testing error vector magnitude (evm) is estimated by feeding signals to the w3013 as described at the top of the electrical characteristics table. a narrowband, sine-wave modulation output spectrum is shown in figure 3. u5 ?77 dbm u4 ?84 dbm u3 ?71 dbm u2 ?63 dbm usb ?10 dbm carrier ?50 dbm lsb ?53 dbm l2 ?72 dbm l3 ?61 dbm l4 ?81 dbm l5 ?82 dbm ?20 ?30 ?40 ?50 ?60 ?70 ?80 f bb = 80 khz f lo 1 = 178 mhz f lo 2 = 1620 mhz rf out = 1442.08 mhz relative magnitude (dbm) 1441.60 1441.68 1441.76 1441.84 1441.92 1442.08 1442.16 1442.24 1442.32 1442.40 1442 ?10 ?90 0 frequency (mhz) figure 3 . w3013 sine-wave modulation output spectrum data from this spectrum are used to estimate evm by the formula: evm (%) = 100 [10 p(l5)/20 + 10 p(l4)/20 + 10 p(l3)/20 + 10 p(l2)/20 + 10 p(lsb)/20 + 10 p(u2)/20 + 10 p(u3)/20 + 10 p(u4)/20 + 10 p(u5)/20 ]/10 p(usb)/20 the data presented in the spectrum above would yield: evm (%) = 100 ? [79e?6 + 89e?6 + 891e?6 + 251e ?6 + 2239e?6 + 708e?6 + 282e?6 + 63e?6 + 141e?6]/0.316e = 1.5% this approximates worst-case digital modulation results because the sine-wave modulation estimate assumes all spurious outputs are in phase and adds their magnitudes as scalars. in addition, this estimate includes full- amplitude measurements of spurious peaks that would appear in adjacent and alternate channels, where a receiver would otherwise provide attenuation. the l3 third-order intermodulation peak and lsb (lower sideband) are normally the unwanted output frequencies that dominate the evm estimate.
preliminary data sheet w3013 indirect quadrature modulator november 1998 with gain control lucent technologies inc. 7 application circuits a typical application circuit for the w3013 is shown in figure 4. the lc filter components, l f and c f , are chosen to have a parallel resonance at the same frequency as lo1, according to the formula ) 12 e 2 . 1 c ( l 2 1 f f f o - + = where f o is the center of the filter passband in hz, l f is the filter inductor in henries, and c f is the filter capacitor in farads. use of an inductor of 100 nh or larger in the filter will minimize the variation of output power due to tolerance variation of the filter components. if the transmitter frequency plan requires the use of more than one lo1 frequency, the w3013 rf output power may be approximately equalized by designing the lc filter center frequency at f f lo f lo o = ( max) ( min) 1 1 , i.e., the geometric mean of the maximum and minimum lo1 frequencies. board and device parasitic capacitance and inductance must be accounted for in calculating l f and c f . the matching network will vary depending on the application, but must include a series capacitor to block dc connections to the w3013 output pin if the load is conductive. for optimum performance, the bypass capacitor, c 1 , should have a series self-resonant frequency that is close to the output frequency and should be mounted near pin 20. it is expected that the positive supply (v cc ) will appear as a low impedance to ground at low frequencies, using a voltage regulator and/or a large capacitor such as a 10 m f tantalum electrolytic. l f 20 19 18 17 16 15 14 12 13 11 1 2 3 4 5 6 7 8 9 10 lo2 50 w (opt) 50 w (opt) lo1 q q i i signals from codec enb/apc matching network c1 +2.7 v c f output z z figure 4 . typical application circuit
w3013 indirect quadrature modulato r preliminary data sheet with gain control november 1998 8 lucent technol ogies inc. enb/apc function the enb/apc lead is used to turn the device on and to control the output power. if the voltage on this lead is below v ilmax , the device is in a low-current mode. between v ihmin and about v cc , the device draws full supply current and is in a power-control mode. in this region, the output power will vary with the voltage on the enb/apc lead as shown in figure 5. apc voltage output power 0.7 1.2 1.7 2.2 2.7 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 1910 mhz 1450 mhz 850 mhz figure 5 . relative rf output power vs. apc voltage characteristic curves unless otherwise specified, the test conditions are identical to those listed for table 2. lo1 frequency (mhz) suppression (db) ?50 ?45 ?40 ?35 ?30 ?25 ?20 50 100 150 200 250 300 350 400 110 mvp-p 200 mvp-p 400 mvp-p v cc = 3.0 v lc filter = 178 mhz figure 6 . unwanted sideband suppression vs. lo1 frequency and lo1 input level lo1 frequency (mhz) suppression (db) ?70 ?60 ?50 ?40 ?30 ?20 ?10 50 100 150 200 250 300 350 400 figure 7 . carrier suppression vs. lo1 frequency
preliminary data sheet w3013 indirect quadrature modulator november 1998 with gain control lucent technologies inc. 9 characteristic curves (continued) vcc = 3.0 i/q = p /4 dqpsk a = 0.35 1.3 vp-p (random data) ?55 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 output power/24.3 khz (dbm) suppression (dbc/24.3 khz) ?70 ?65 ?60 ?55 ?50 ?45 ?40 ?35 ?30 ?25 ?20 30 khz acp 60 khz acp 90 khz acp figure 8 . adjacent channel suppression for is-136 vs. 1900 mhz output power vcc = 2.7 i/q = p /4 dqpsk a = 0.35 1.3 vp-p (random data) output power/21 khz (dbm) suppression (dbc/21 khz) acp 50 khz acp 100 khz ?80 ?75 ?70 ?65 ?60 ?55 ?50 ?45 ?40 ?55 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 figure 9 . adjacent channel suppression for pdc vs. 940 mhz output power 0.01 0.1 1 10 100 1000 i/q frequency (mhz) 2.8 mvp-p 500 mvp-p 1 vp-p normalized gain (db) ?33 ?30 ?27 ?24 ?21 ?18 ?15 ?12 ?9 ?6 ?3 0 figure 10 . iq bandwidth vs. ac input voltage
w3013 indirect quadrature modulator preliminary data sheet with gain control november 1998 10 lucent technol ogies inc. rf output impedance the output impedance of the rf output pin is shown in figure 11 and table 3 . figure 11 . rf out impedance at pin 19 contact with board (800 mhz to 2000 mhz) table 3 . rf out representative impedances frequency, mhz r + jx, w w frequency, mhz r + jx, w w 800 15.26 + j16.09 1440 19.04 + j 29.57 840 15.48 + j 16.98 1480 19.45 + j 30.36 880 15.71 + j 17.82 1520 19.91 + j 31.11 920 16.21 + j 18.77 1560 20.31 + j 31.63 960 16.20 + j 19.32 1600 20.75 + j 32.14 1000 16.30 + j 20.17 1640 20.72 + j 32.78 1040 16.55 + j 20.96 1680 20.67 + j 33.74 1080 16.66 + j 21.77 1720 20.88 + j 34.94 1120 16.84 + j 22.61 1760 21.18 + j 36.44 1160 16.92 + j 23.51 1800 21.86 + j 37.98 1200 17.08 + j 24.34 1840 22.44 + j 39.51 1240 17.27 + j 25.23 1880 23.53 + j 40.99 1280 17.48 + j 26.17 1920 24.09 + j 42.80 1320 17.75 + j 27.08 1960 24.98 + j 44.50 1360 18.12 + j 27.98 2000 26.01 + j 46.62 1400 18.53 + j 28.90
preliminary data sheet w3013 indirect quadrature modulator november 1998 with gain control lucent technologies inc. 11 package outline 20-pin tssop dimensions are in millimeters. 4. 3/ 4. 5 see det ail a 0. 09 0/ 0. 20 0.9 0 0 .05 -e- 11 20 10 1 1. 0 0 1. 0 0 1. 0 0 0. 2 5 4 e m m 6. 25 / 6. 5 ba se m e ta l with plati ng de ta il c 0. 2 2 0. 0 3 0. 19 / 0. 3 0 0. 90 /0 .1 35 0. 09 0/ 0. 20 se at in g pl a n e de ta il b 1 0. 0 7 6 c 0. 65 bs c 1. 1 0 m a x 0. 1 5 m a x 6. 50 0 . 10 0. 25 bs c de ta il a 0. 60 0 . 10 8 de ta il c de ta il b 5-5499.r2
w3013 indirect quadrature modulator preliminary data sheet with gain control november 1998 for additional information, contact your microelectronics group account manager or the following: internet: http://www.lucent.com/micro e-mail: docmaster@micro.lucent.com n. america microelectronics group, lucen t technologies inc., 555 union boulevard, room 30l-15p-ba, allentown, pa 18103 1-800-372-2447 , fax 610-712-4106 (in canada: 1-800-553-2448 , fax 610-712-4106) asia pacific: microelectronics group, lucent technologies singapore pte. ltd., 77 science park dr ive, #03-18 cintech iii, singapore 118256 tel. (65) 778 8833 , fax (65) 777 7495 china: microelectronics group, lucent technologies (china) co., ltd., a-f2, 23/f, zao fong universe building, 1800 zhong shan xi road, shanghai 200233 p.r. china tel. (86) 21 6440 0468, ext. 316 , fax (86) 21 6440 0652 japan: microelectronics group, lucent technologies japan ltd., 7-18, higashi-gotanda 2-chome, shinagawa-ku, tokyo 141, japan tel. (81) 3 5421 1600 , fax (81) 3 5421 1700 europe: data requests: microelectronics group dataline: tel. (44) 1189 324 299 , fax (44) 1189 328 148 technical inquiries: germany: (49) 89 95086 0 (munich), united kingdom: (44) 1344 865 900 (ascot), france: (33) 1 40 83 68 00 (paris), sweden: (46) 8 594 607 00 (stockholm), finland: (358) 9 4354 2800 (helsinki), italy: (39) 02 6608131 (milan), spain: ( 34) 1 807 1441 (madrid) lucent technologies inc. reserves the right to make changes to the product(s) or information contained herein without notice. no liability is assumed as a result of their use or application. no rights under any patent accompany the sale of any such product(s) or information. copyright ? 1998 lucent technologies inc. all rights reserved november 1998 ds98-236wrf (replaces ds98-057wrf) manufacturing information this device will be assembled in one of the following locations: assembly codes p, m, or t. ordering information device code description package comcode W3013BCL indirect rf modulator 20-pin tssop 107 956 492 W3013BCL-tr * ? 20-pin tssop, tape and reel 107 956 518 evb3013a evaluation board ? 108 051 574 * contact your microelectronics group account manager for minimum order requirements.

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